Phototransistor Reflective Object Sensor

The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter.

Datasheet: http://www.sparkfun.com/datasheets/Sensors/QRB1114.pdf

MAX RATINGS:

EMITTER
Continuous Forward Current (IF) 50 mA
Reverse Voltage (VR) 5 V
Power Dissipation (PD) 100 mW

SENSOR
Collector-Emitter Voltage (VCEO) 30 V
Emitter-Collector Voltage (VECO) 4.5 V
Collector Current 20 mA
Power Dissipation (PD) 100 mW